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SPD04P10PLGBTMA1 Image

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Mfr. #:
SPD04P10PLGBTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 100 V 4.2A (Tc) 38W (Tc) PG-TO252-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 4.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) at Different Id, Vgs 850 mOhm @ 3A, 10V
Vgs(th) (Max) at Different Id 2V @ 380μA
Gate Charge?(Qg) (Max) at Different Vgs 16 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 372 pF @ 25 V
FET function -
Power dissipation (max) 38W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3
Package/case TO-252-3, DPak (2-lead tab), SC-63
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