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IPB60R040C7ATMA1 Image

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Mfr. #:
IPB60R040C7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 50A (Tc) 227W (Tc) PG-TO263-3
Datasheet:
In Stock:
1232
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C7
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 50A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 40 milliohms @ 24.9A, 10V
Vgs(th) (max) at Id 4V @ 1.24mA
Gate Charge?(Qg) (max) at Vgs 107 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 4340 pF @ 400 V
FET function -
Power dissipation (max) 227W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3
Package/case TO-263-4, D2Pak (3-lead tab), TO-263AA
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