IPW60R037CSFDXKSA1 Infineon | Infineon agency

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Mfr. #：

IPW60R037CSFDXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 54A (Tc) 245W (Tc) PG-TO247-3

Datasheet:

In Stock:

169

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? CFSD
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	54A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	37 mOhm @ 32.6A, 10V
Vgs(th) (max) at Id	4.5V @ 1.63mA
Gate Charge?(Qg) (max) at Vgs	136 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	5623 pF @ 400 V
FET function	-
Power dissipation (max)	245W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO247-3
Package/case	TO-247-3

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