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IPP60R170CFD7XKSA1 Image

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Mfr. #:
IPP60R170CFD7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 14A (Tc) 75W (Tc) PG-TO220-3
Datasheet:
In Stock:
424
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CFD7
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 14 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 170 mOhm @ 6 A, 10 V
Vgs(th) (max) at Id 4.5 V @ 300 μA
Gate Charge?(Qg) (max) at Vgs 28 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 1199 pF @ 400 V
FET Function -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package/Case TO-220-3
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