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IMBG120R350M1HXTMA1 Image

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Mfr. #:
IMBG120R350M1HXTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 1200 V 4.7A (Tc) 65W (Tc) PG-TO263-7-12
Datasheet:
In Stock:
1284
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 4.7A (Tc)
On-Resistance (max) at Id, Vgs 468 mOhm @ 2A, 18V
Vgs(th) (max) at Id 5.7V @ 1mA
Gate Charge?(Qg) (max) at Vgs 5.9 nC @ 18 V
Vgs (max) 18V, -15V
Various Vds Input Capacitance (Ciss) (max) 196 pF @ 800 V
FET Function Standard
Power Dissipation (max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package/Case TO-263-8, D2Pak (7-Lead Tab), TO-263CA
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