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IPA65R280E6XKSA1 Image

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Mfr. #:
IPA65R280E6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 650 V 13.8A (Tc) 32W (Tc) PG-TO220-FP
Datasheet:
In Stock:
500
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 13.8 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 280 mOhm @ 4.4 A, 10 V
Vgs(th) (max) at Id 3.5 V @ 440 μA
Gate Charge?(Qg) (max) at Vgs 45 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 950 pF @ 100 V
FET Function -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package/Case TO-220-3 Full Package
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