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IPA60R180C7XKSA1 Image

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Mfr. #:
IPA60R180C7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 9A (Tc) 29W (Tc) PG-TO220 whole package
Datasheet:
In Stock:
299
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 180 mOhm @ 5.3A, 10V
Vgs(th) (max) at Id 4V @ 260μA
Gate Charge?(Qg) (max) at Vgs 24 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1080 pF @ 400 V
FET Function -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Package
Package/Case TO-220-3 Full Package
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