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IPB180P04P4L02ATMA2 Image

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Mfr. #:
IPB180P04P4L02ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 40 V 180A (Tc) 150W (Tc) PG-TO263-7-3
Datasheet:
In Stock:
107
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?-P2
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 180A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 2.4 milliohms @ 100A, 10V
Vgs(th) (max) at Id 2.2V @ 410μA
Gate Charge?(Qg) (max) at Vgs 286 nC @ 10 V
Vgs (max) 5V, -16V
Input capacitance (Ciss) (max) at different Vds 18700 pF @ 25 V
FET function -
Power dissipation (max) 150W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-7-3
Package/case TO-263-7, D2Pak (6-lead tab)
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