SPP18P06PHXKSA1 Infineon | Infineon agency

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Mfr. #：

SPP18P06PHXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole P channel 60 V 18.7A (Ta) 81.1W (Ta) PG-TO220-3

Datasheet:

In Stock:

587

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Package	Device
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	18.7A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	130 mOhm @ 13.2A, 10V
Vgs(th) (max) at Id	4V @ 1mA
Gate Charge?(Qg) (max) at Vgs	28 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	860 pF @ 25 V
FET Function	-
Power Dissipation (Max)	81.1 W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package/Case	TO-220-3

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