IRF100B202 Infineon | Infineon agency

img for reference only

Mfr. #：

IRF100B202

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 97A (Tc) 221W (Tc) TO-220AB

Datasheet:

In Stock:

1960

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?, StrongIRFET?
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	97A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	8.6 mOhm @ 58A, 10V
Vgs(th) (max) at Id	4V @ 150μA
Gate Charge?(Qg) (max) at Vgs	116 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	4476 pF @ 50 V
FET Function	-
Power Dissipation (Max)	221W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

IM240M6Z1BALMA1

IGBT Module Three Phase Inverter 600 V 8.9 W Surface Mount 23-SOP
IR2131S

Half-bridge Gate Driver IC Inverter 28-SOIC
F423MR12W1M1B11BOMA1

IGBT module trench full bridge 1200 V 50 A 0.2 W base mount AG-EASY1BM-2
IM241S6S1JAUMA1

IGBT Module Three Phase Inverter 600 V 9 W Surface Mount Type 23-SOP
F3L25R12W1T4B27BOMA1

IGBT module half bridge 1200 V 45 A 215 W base mount AG-EASY1B
FS50R12W2T4BOMA1

IGBT Module Trench Field Stop Full Bridge Inverter 1200 V 83 A 335 W Chassis Mount Module
2EDF7275FXUMA1

Half-bridge Gate Driver IC Non-Inverting PG-DSO-16-11
IRS2008MTRPBFAUMA1

Half Bridge Gallery Drive IC CMOS 14-MLPQ (4X4)