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IPD65R660CFDAATMA1 Image

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Mfr. #:
IPD65R660CFDAATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 6A (Tc) 62.5W (Tc) PG-TO252-3
Datasheet:
In Stock:
4637
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 660 mOhm @ 3.22A, 10V
Vgs(th) (max) at Id 4.5V @ 214.55μA
Gate Charge?(Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 543 pF @ 100 V
FET function -
Power dissipation (max) 62.5W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3
Package/case TO-252-3, DPak (2-lead tab), SC-63
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