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IPSA70R450P7SAKMA1 Image

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Mfr. #:
IPSA70R450P7SAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 700 V 10A (Tc) 50W (Tc) PG-TO251-3
Datasheet:
In Stock:
1481
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 700 V
Current at 25°C - Continuous Drain (Id) 10A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 450 mOhm @ 2.3A, 10V
Vgs(th) (max) at Id 3.5V @ 120μA
Gate Charge?(Qg) (max) at Vgs 13.1 nC @ 400 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 424 pF @ 400 V
FET function -
Power dissipation (max) 50W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO251-3
Package/case TO-251-3 short lead, IPak, TO-251AA
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