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IPN95R3K7P7ATMA1 Image

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Mfr. #:
IPN95R3K7P7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 950 V 2A (Tc) 6W (Tc) PG-SOT223
Datasheet:
In Stock:
8035
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P7
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 950 V
Current at 25°C - Continuous Drain (Id) 2A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 3.7 Ohm @ 800mA, 10V
Vgs(th) (max) at Id 3.5V @ 40μA
Gate Charge?(Qg) (max) at Vgs 6 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 196 pF @ 400 V
FET Function -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package/Case TO-261-4, TO-261AA
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