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IPN60R1K5PFD7SATMA1 Image

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Mfr. #:
IPN60R1K5PFD7SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 650 V 3.6A (Tc) 6W (Tc) PG-SOT223-3
Datasheet:
In Stock:
2960
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?PFD7
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 3.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 1.5 ohms @ 700mA, 10V
Vgs(th) (max) at Id 4.5V @ 40μA
Gate Charge?(Qg) (max) at Vgs 4.6 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 169 pF @ 400 V
FET function -
Power dissipation (max) 6W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-SOT223-3
Package/case TO-261-4, TO-261AA
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