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IPD80R2K8CEATMA1 Image

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Mfr. #:
IPD80R2K8CEATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 800 V 1.9A (Tc) 42W (Tc) PG-TO252-3
Datasheet:
In Stock:
4860
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CE
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 1.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 2.8 Ohm @ 1.1A, 10V
Vgs(th) (max) at Id 3.9V @ 120μA
Gate Charge?(Qg) (max) at Vgs 12 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 290 pF @ 100 V
FET function -
Power dissipation (max) 42W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3
Package/case TO-252-3, DPak (2-lead tab), SC-63
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