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IRFH5301TRPBF Image

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Mfr. #:
IRFH5301TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 30 V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W (Tc) PQFN (5x6) Single chip pad
Datasheet:
In Stock:
11390
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 35A (Ta), 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.85 milliohms @ 50A, 10V
Vgs(th) (max) at Id 2.35V @ 100μA
Gate Charge?(Qg) (max) at Vgs 77 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5114 pF @ 15 V
FET function -
Power dissipation (max) 3.6W (Ta), 110W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PQFN (5x6) Single chip pad
Package/case 8-PowerVDFN
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