IPN50R1K4CEATMA1 Infineon | Infineon agency

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Mfr. #：

IPN50R1K4CEATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 500 V 4.8A (Tc) 5W (Tc) PG-SOT223-3

Datasheet:

In Stock:

17369

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? CE
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	500 V
Current at 25°C - Continuous Drain (Id)	4.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	13V
On-Resistance (max) at Id, Vgs	1.4 Ohm @ 900mA, 13V
Vgs(th) (max) at Id	3.5V @ 70μA
Gate Charge?(Qg) (max) at Vgs	8.2 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	178 pF @ 100 V
FET function	-
Power dissipation (max)	5W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-SOT223-3
Package/case	TO-261-4, TO-261AA

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