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IPN50R1K4CEATMA1 Image

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Mfr. #:
IPN50R1K4CEATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 500 V 4.8A (Tc) 5W (Tc) PG-SOT223-3
Datasheet:
In Stock:
17369
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CE
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 4.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 13V
On-Resistance (max) at Id, Vgs 1.4 Ohm @ 900mA, 13V
Vgs(th) (max) at Id 3.5V @ 70μA
Gate Charge?(Qg) (max) at Vgs 8.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 178 pF @ 100 V
FET function -
Power dissipation (max) 5W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-SOT223-3
Package/case TO-261-4, TO-261AA
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