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IPZ65R019C7XKSA1 Image

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Mfr. #:
IPZ65R019C7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 650 V 75A (Tc) 446W (Tc) PG-TO247-4
Datasheet:
In Stock:
729
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 75A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 19 milliohms @ 58.3A, 10V
Vgs(th) (max) at Id 4V @ 2.92mA
Gate Charge?(Qg) (max) at Vgs 215 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 9900 pF @ 400 V
FET Function -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4
Package/Case TO-247-4
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