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IMBG120R220M1HXTMA1 Image

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Mfr. #:
IMBG120R220M1HXTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 1200 V 13A (Tc) 83W (Tc) PG-TO263-7-12
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 13A (Tc)
On-Resistance (max) at Id, Vgs 294 mOhm @ 4A, 18V
Vgs(th) (max) at Id 5.7V @ 1.6mA
Gate Charge?(Qg) (max) at Vgs 9.4 nC @ 18 V
Vgs (max) 18V, -15V
Various Vds Input Capacitance (Ciss) (max) 312 pF @ 800 V
FET Function Standard
Power Dissipation (max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package/Case TO-263-8, D2Pak (7-Lead Tab), TO-263CA
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