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IPP076N15N5AKSA1 Image

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Mfr. #:
IPP076N15N5AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 150 V 112A (Tc) 214W (Tc) PG-TO220-3
Datasheet:
In Stock:
1885
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 112 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 8 V, 10 V
On-Resistance (max) at Id, Vgs 7.6 mOhm @ 56 A, 10
Vgs(th) (max) at Id 4.6 V @ 160 μA
Gate Charge?(Qg) (max) at Vgs 21 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 4700 pF @ 75 V
FET Function Standard
Power Dissipation (max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package/Case TO-220-3
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