IPD90P04P4L04ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPD90P04P4L04ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 40 V 90A (Tc) 125W (Tc) PG-TO252-3-313

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	90A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	4.3 mOhm @ 90A, 10V
Vgs(th) (max) at Id	2.2V @ 250μA
Gate Charge?(Qg) (max) at Vgs	176 nC @ 10 V
Vgs (max)	±16V
Input capacitance (Ciss) (max)	11570 pF @ 25 V
FET function	-
Power dissipation (max)	125W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3-313
Package/case	TO-252-3, DPak (2-lead tab), SC-63

IRF7907TRPBF

Dual MOSFET, N-channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm
IRFR1018ETRPBF

Power MOSFET, N-Channel, 60 V, 79 A, 0.0071 ohm, TO-252AA, Surface Mount
BSL308CH6327XTSA1

Dual MOSFET, Complementary N and P channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm
IRFH7932TRPBF

Power MOSFET, HEXFET?, N-Channel, 30 V, 25 A, 0.0025 ohm, QFN, Surface Mount
IRF3808STRLPBF

Power MOSFET, N-Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount
IPD60R400CEAUMA1

Power MOSFET, N-channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface mount
IPU60R2K1CEAKMA1

Power MOSFET, N-channel, 600 V, 3.7 A, 1.8 ohm, TO-251, Through Hole
IPB60R120P7ATMA1

Power MOSFET, N-Channel, 600 V, 26 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount