LOGO
LOGO
AIMW120R045M1XKSA1 Image

img for reference only

Mfr. #:
AIMW120R045M1XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 1200 V 52A (Tc) 228W (Tc) PG-TO247-3
Datasheet:
In Stock:
230
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolSiC?
Package Tube
FET Type N-channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 52A (Tc)
On-Resistance (max) at Id, Vgs 59 mOhm @ 20A, 15V
Vgs(th) (max) at Id 5.7V @ 10mA
Gate Charge?(Qg) (max) at Vgs 57 nC @ 15 V
Vgs (max) 20V, -7V
Various Vds Input Capacitance (Ciss) (Max) 2130 pF @ 800 V
FET Function -
Power Dissipation (Max) 228W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package/Case TO-247-3
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd