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IMZ120R030M1HXKSA1 Image

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Mfr. #:
IMZ120R030M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 1200 V 56A (Tc) 227W (Tc) PG-TO247-4-1
Datasheet:
In Stock:
9
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Package Tube
FET Type N-channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 56A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 15V, 18V
On-Resistance (max) at Id, Vgs 40 milliohms @ 25A, 18V
Vgs(th) (max) at Id 5.7V @ 10mA
Gate Charge?(Qg) (max) at Vgs 63 nC @ 18 V
Vgs (max) 23V, -7V
Input Capacitance (Ciss) (Max) at Vds 2120 pF @ 800 V
FET Function -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-1
Package/Case TO-247-4
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