IPD25N06S4L30ATMA2 Infineon | Infineon agency

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Mfr. #：

IPD25N06S4L30ATMA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 60 V 25A (Tc) 29W (Tc) PG-TO252-3-11

Datasheet:

In Stock:

16128

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	25A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	30 milliohms @ 25A, 10V
Vgs(th) (max) at Id	2.2V @ 8μA
Gate Charge?(Qg) (max) at Vgs	16.3 nC @ 10 V
Vgs (max)	±16V
Input capacitance (Ciss) (max)	1220 pF @ 25 V
FET function	-
Power dissipation (max)	29W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3-11
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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