LOGO
LOGO
IAUT300N10S5N015ATMA1 Image

img for reference only

Mfr. #:
IAUT300N10S5N015ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 300A (Tc) 375W (Tc) PG-HSOF-8-1
Datasheet:
In Stock:
6357
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?-5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 300A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 1.5 milliohms @ 100A, 10V
Vgs(th) (max) at Id 3.8V @ 275μA
Gate Charge?(Qg) (max) at Vgs 216 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 16011 pF @ 50 V
FET function -
Power dissipation (max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOF-8-1
Package/case 8-PowerSFN
Related models
  • IPB50R140CPATMA1

    IPB50R140CP Series 550 V 0.140 Ohm N-Channel CoolMOSTM Power Transistor - PG-TO-263

  • IPB60R060P7ATMA1

    Single N-Channel 600 V 60 mOhm 67 nC CoolMOS? Power Mosfet - D2PAK

  • IPB60R080P7ATMA1

    Single N-Channel 600 V 80 mOhm 51 nC CoolMOS? Power Mosfet - D2PAK

  • IPB60R099CPAATMA1

    IPB60R099CPA Series 600 V 0.105 Ohm N-Channel CoolMOS? Power Transistor-PG-TO263-3-2

  • IPB60R099CPATMA1

    IPB60R099CP Series 650 V 0.099 Ohm N-Channel CoolMOSTM Power Transistor - PG-TO-263

  • IPB60R099P7ATMA1

    Single N-Channel 600 V 99 mOhm 45 nC CoolMOS? Power Mosfet - D2PAK

  • IPB60R120P7ATMA1

    Single N-Channel 600 V 120 mOhm 36 nC CoolMOS? Power Mosfet - D2PAK

  • IPB65R190CFDAATMA1

    Single N-Channel 650V 190 mOhm 68 nC CoolMOS? Power Mosfet - D2PAK

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd