IMBF170R1K0M1XTMA1 Infineon | Infineon agency

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Mfr. #：

IMBF170R1K0M1XTMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 1700 V 5.2A (Tc) 68W (Tc) PG-TO263-7-13

Datasheet:

In Stock:

521

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolSiC?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	1700 V
Current at 25°C - Continuous Drain (Id)	5.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	12V, 15V
On-Resistance (max) at Id, Vgs	1000 milliohms @ 1A, 15V
Vgs(th) (max) at Id	5.7V @ 1.1mA
Gate Charge?(Qg) (max) at Vgs	5 nC @ 12 V
Vgs (max)	20V, -10V
Input Capacitance (Ciss) (Max) at Vds	275 pF @ 1000 V
FET Function	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-13
Package/Case	TO-263-8, D2Pak (7-Lead Tab), TO-263CA

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