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BSZ018NE2LSIATMA1 Image

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Mfr. #:
BSZ018NE2LSIATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 25 V 22A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8-FL
Datasheet:
In Stock:
24836
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 22A (Ta), 40A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.8 mOhm @ 20A, 10V
Vgs(th) (max) at Id 2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 36 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 2500 pF @ 12 V
FET function -
Power dissipation (max) 2.1W (Ta), 69W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TSDSON-8-FL
Package/case 8-PowerTDFN
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