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IPD082N10N3GATMA1 Image

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Mfr. #:
IPD082N10N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 80A (Tc) 125W (Tc) PG-TO252-3
Datasheet:
In Stock:
28646
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 8.2 mOhm @ 73 A, 10 V
Vgs(th) (max) at Id 3.5 V @ 75 μA
Gate Charge?(Qg) (max) at Vgs 55 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 3980 pF @ 50 V
FET Function -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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