SPA06N80C3XKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

SPA06N80C3XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 800 V 6A (Tc) 39W (Tc) PG-TO220-3-31

Datasheet:

In Stock:

13709

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	800 V
Current at 25°C - Continuous Drain (Id)	6A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	900 mOhm @ 3.8A, 10V
Vgs(th) (max) at Id	3.9V @ 250μA
Gate Charge?(Qg) (max) at Vgs	41 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	785 pF @ 100 V
FET Function	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-31
Package/Case	TO-220-3 Full Package

IPB117N20NFDATMA1

Power MOSFET, N-Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount
IPN60R1K5CEATMA1

Power MOSFET, N-Channel, 600 V, 5 A, 1.35 ohm, SOT-223, Surface Mount
IPB029N06N3GATMA1

Power MOSFET, N-Channel, 60 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount
IPP60R210CFD7XKSA1

Power MOSFET, N-channel, 600 V, 12 A, 0.171 ohm, TO-220, Through Hole
IPN95R2K0P7ATMA1

Power MOSFET, N-Channel, 950 V, 4 A, 1.71 ohm, SOT-223, Surface Mount
IPB160N04S4H1ATMA1

Power MOSFET, N-Channel, 40 V, 160 A, 0.0014 ohm, TO-263 (D2PAK), Surface Mount
IPP60R160P6XKSA1

Power MOSFET, N-channel, 600 V, 23.8 A, 0.144 ohm, TO-220, Through Hole
IRL2910STRLPBF

Power MOSFET, N-Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount