BSZ160N10NS3GATMA1 Infineon | Infineon agency

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Mfr. #：

BSZ160N10NS3GATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) PG-TSDSON-8

Datasheet:

In Stock:

59376

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	8A (Ta), 40A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	16 milliohms @ 20A, 10V
Vgs(th) (max) at Id	3.5V @ 12μA
Gate Charge?(Qg) (max) at Vgs	25 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1700 pF @ 50 V
FET function	-
Power dissipation (max)	2.1W (Ta), 63W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TSDSON-8
Package/case	8-PowerTDFN

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