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SPD18P06PGBTMA1 Image

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Mfr. #:
SPD18P06PGBTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 60 V 18.6A (Tc) 80W (Tc) PG-TO252-3
Datasheet:
In Stock:
8288
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 18.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 130 mOhm @ 13.2A, 10V
Vgs(th) (max) at Id 4V @ 1mA
Gate Charge?(Qg) (max) at Vgs 33 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 860 pF @ 25 V
FET Function -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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