LOGO
LOGO
IRFHM9331TRPBF Image

img for reference only

Mfr. #:
IRFHM9331TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount P channel 30 V 11A (Ta), 24A (Tc) 2.8W (Ta) PQFN (3x3)
Datasheet:
In Stock:
39818
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 11A (Ta), 24A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V, 20V
On-Resistance (Max) @ Id, Vgs 10 milliohms @ 11A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Gate Charge?(Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (max) ±25V
Input capacitance (Ciss) (max) 1543 pF @ 25 V
FET function -
Power dissipation (max) 2.8W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PQFN (3x3)
Package/case 8-PowerTDFN
Related models
  • IPDQ60R022S7XTMA1

    Infineon N-channel MOSFET, Vds=600 V, 24 A, PG-HDSOP-22-1, SMD, SMD mounting

  • IPAN60R180P7SXKSA1

    Infineon MOSFET, 18 A, PG-TO220, Through Hole, 3-pin

  • IRFHM9331TRPBF

    Infineon P-channel enhancement mode MOS tube, Vds=30 V, 11 A, PQFN, SMD mount, 8 pins, IRFHM9331TRPBF

  • IRF1104PBF

    Infineon N-channel MOS tube, Vds=40 V, 100 A, TO-220AB, through-hole mounting, IRF1104PBF

  • IPF017N08NF2SATMA1

    Infineon N-channel MOSFET, Vds=80 V, 259 A, PG-TO263-7, SMD mount

  • IRF7854TRPBF

    Infineon N-channel MOS tube, Vds=80 V, 10 A, SO-8, through-hole mounting, IRF7854TRPBF

  • BSZ900N20NS3GATMA1

    Infineon N-channel MOS tube, Vds=200 V, 15.2 A, PG-TSDSON-8, SMD installation

  • IPP013N04NF2SAKMA1

    Infineon N-channel enhancement mode MOS tube, Vds=40 V, 197 A, TO-220, SMD mount, 3 pins

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd