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BSZ110N06NS3GATMA1 Image

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Mfr. #:
BSZ110N06NS3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 60 V 20A (Tc) 2.1W (Ta), 50W (Tc) PG-TSDSON-8
Datasheet:
In Stock:
11192
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 20 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 11 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id 4 V @ 23 μA
Gate Charge?(Qg) (max) at Vgs 33 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 2700 pF @ 30 V
FET Function -
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package/Case 8-PowerVDFN
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