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IMW65R030M1HXKSA1 Image

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Mfr. #:
IMW65R030M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 58A (Tc) 197W (Tc) PG-TO247-3-41
Datasheet:
In Stock:
90
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Package Tube
FET Type N-channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 58A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 18V
On-Resistance (max) at Id, Vgs 42 mOhm @ 29.5A, 18V
Vgs(th) (max) at Id 5.7V @ 8.8mA
Gate Charge?(Qg) (max) at Vgs 48 nC @ 18 V
Vgs (max) 20V, -2V
Input Capacitance (Ciss) (Max) at Different Vds 1643 pF @ 400 V
FET Function -
Power Dissipation (Max) 197W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package/Case TO-247-3
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