IPP040N08NF2SAKMA1 Infineon | Infineon agency

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Mfr. #：

IPP040N08NF2SAKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 80 V 22A (Ta), 115A (Tc) 3.8W (Ta), 150W (Tc) PG-TO220-3

Datasheet:

In Stock:

814

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	StrongIRFET? 2
Package	Tube
FET Type	N-channel
Technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	80 V
Current at 25°C - continuous drain (Id)	22A (Ta), 115A (Tc)
Drive voltage (max Rds On, min Rds On)	6V, 10V
On-resistance (max) at Id, Vgs	4 milliohms @ 80A, 10V
Vgs(th) (max) at Id	3.8V @ 85μA
Gate charge?(Qg) (max) at Vgs	81 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	3800 pF @ 40 V
FET function	-
Power dissipation (max)	3.8W (Ta), 150W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-3
Package/case	TO-220-3

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