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IPS60R360PFD7SAKMA1 Image

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Mfr. #:
IPS60R360PFD7SAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 10A (Tc) 43W (Tc) PG-TO251-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
CoolMOS?PFD7
Fittings
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 10A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 360 mOhm @ 2.9A, 10V
Vgs(th) (max) at Id 4.5V @ 140μA
Gate Charge?(Qg) (max) at Vgs 12.7 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 534 pF @ 400 V
FET function -
Power dissipation (max) 43W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO251-3
Package/case TO-251-3 short lead, IPak, TO-251AA
IPS60R
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