IPW60R017C7XKSA1 Infineon | Infineon agency

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Mfr. #：

IPW60R017C7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 109A (Tc) 446W (Tc) PG-TO247-3-41

Datasheet:

In Stock:

240

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	109A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	17 mOhm @ 58.2A, 10V
Vgs(th) (max) at Id	4V @ 2.91mA
Gate Charge?(Qg) (max) at Vgs	240 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	9890 pF @ 400 V
FET Function	-
Power Dissipation (Max)	446W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package/Case	TO-247-3

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