LOGO
LOGO
IPA70R360P7SXKSA1 Image

img for reference only

Mfr. #:
IPA70R360P7SXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 700 V 12.5A (Tc) 26.4W (Tc) PG-TO220 whole package
Datasheet:
In Stock:
442
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 700 V
Current at 25°C - Continuous Drain (Id) 12.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 360 mOhm @ 3A, 10V
Vgs(th) (max) at Id 3.5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 16.4 nC @ 10 V
Vgs (max) ±16V
Various Vds Input Capacitance (Ciss) (Max) 517 pF @ 400 V
FET Function -
Power Dissipation (Max) 26.4W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Package
Package/Case TO-220-3 Full Package
Related models
  • CY15V104QI-20LPXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 20MHz; GQFN8

  • CY15V104QN-20LPXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 20MHz; GQFN8

  • CY15V104QN-50SXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 50MHz; SOIC8

  • CY15V104QN-50SXIT

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 50MHz; SOIC8

  • CY15V104QSN-108SXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz; SOIC8

  • CY15B108QN-40LPXI

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; GQFN8

  • CY15B108QN-40SXI

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8

  • CY15B108QN-40SXIT

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd