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IRFI1310NPBF Image

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Mfr. #:
IRFI1310NPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 24A (Tc) 56W (Tc) TO-220AB whole package
Datasheet:
In Stock:
418
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 24A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 36 mOhm @ 13A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 120 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1900 pF @ 25 V
FET Function -
Power Dissipation (Max) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB Full Package
Package/Case TO-220-3 Full Package
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