IMW120R350M1HXKSA1 Infineon | Infineon agency

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Mfr. #：

IMW120R350M1HXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 1200 V 4.7A (Tc) 60W (Tc) PG-TO247-3-41

Datasheet:

In Stock:

1208

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolSiC?
Package	Tube
FET Type	N-channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	1200 V
Current at 25°C - Continuous Drain (Id)	4.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	15V, 18V
On-Resistance (max) at Id, Vgs	455 milliohms @ 2A, 18V
Vgs(th) (max) at Id	5.7V @ 1mA
Gate Charge?(Qg) (max) at Vgs	5.3 nC @ 18 V
Vgs (max)	23V, -7V
Input Capacitance (Ciss) (Max) at Different Vds	182 pF @ 800 V
FET Function	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package/Case	TO-247-3

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