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BSC019N08NS5ATMA1 Image

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Mfr. #:
BSC019N08NS5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 80 V 28A (Ta), 237A (Tc) 3W (Ta), 214W (Tc) PG-TSON-8-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 28A (Ta), 237A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 1.9 milliohms @ 50A, 10V
Vgs(th) (max) at Id 3.8V @ 146μA
Gate Charge?(Qg) (max) at Vgs 117 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 8600 pF @ 40 V
FET function -
Power dissipation (max) 3W (Ta), 214W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TSON-8-3
Package/case 8-PowerTDFN
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