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IMBF170R650M1XTMA1 Image

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Mfr. #:
IMBF170R650M1XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 1700 V 7.4A (Tc) 88W (Tc) PG-TO263-7-13
Datasheet:
In Stock:
1898
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1700 V
Current at 25°C - Continuous Drain (Id) 7.4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 12V, 15V
On-Resistance (max) at Id, Vgs 650 milliohms @ 1.5A, 15V
Vgs(th) (max) at Id 5.7V @ 1.7mA
Gate Charge?(Qg) (max) at Vgs 8 nC @ 12 V
Vgs (max) 20V, -10V
Input Capacitance (Ciss) (Max) at Different Vds 422 pF @ 1000 V
FET Function -
Power Dissipation (Max) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-13
Package/Case TO-263-8, D2Pak (7-Lead Tab), TO-263CA
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