IPTG111N20NM3FDATMA1 Infineon | Infineon agency

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Mfr. #：

IPTG111N20NM3FDATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 200 V 10.8A (Ta), 108A (Tc) 3.8W (Ta), 375W (Tc) PG-HSOG-8-1

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS? 3
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	10.8A (Ta), 108A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	11.1 mOhm @ 96A, 10V
Vgs(th) (max) at Id	4V @ 267μA
Gate Charge?(Qg) (max) at Vgs	81 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	7000 pF @ 100 V
FET function	-
Power dissipation (max)	3.8W (Ta), 375W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-HSOG-8-1
Package/case	8-PowerSMD, gull wing

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