LOGO
LOGO
IPBE65R190CFD7AATMA1 Image

img for reference only

Mfr. #:
IPBE65R190CFD7AATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 14A (Tc) 77W (Tc) PG-TO263-7-11
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 14 A (Tc)
On-Resistance (max) at Id, Vgs 190 mOhm @ 6.4 A, 10 V
Vgs(th) (max) at Id 4.5 V @ 320 μA
Gate Charge?(Qg) (max) at Vgs 7 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 1291 pF @ 400 V
FET Function -
Power Dissipation (max) 77W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-11
Package/Case TO-263-8, D2Pak (7-Lead Tab), TO-263CA
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd