BSO051N03MS G Infineon | Infineon agency

img for reference only

Mfr. #：

BSO051N03MS G

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface sticker N channel 30 V 14A (TA) 1.56W (TA) PG-DSO-8

Datasheet:

In Stock:

2168

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	14 A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	5.1 mOhm @ 18 A, 10 V
Vgs(th) (max) at Id	2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	55 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	4300 pF @ 15 V
FET Function	-
Power Dissipation (Max)	1.56W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-DSO-8
Package/Case	8-SOIC (0.154", 3.90mm Width)

BCR 08PN H6327

BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR
BCR 503 E6327

BIPOLAR TRANSISTOR - PREBIASED AF TRANS DIGITAL BJT NPN 50V 500MA
BCR183E6327HTSA1

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
BCR 158W H6327

BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR
BCR 108W H6327

BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR
BCR 192 E6327

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
BCR 129 E6327

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
BCR 116W H6327

BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR