FZ3600R12HP4PHPSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

FZ3600R12HP4PHPSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT Module Trench Single Switch 1200 V 4930 A 19000 W Base Mount AG-IHMB190-2

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	IHM-B
Package	Tray
IGBT Type	Trenches
Configuration	Single Switch
Voltage - Collector Emitter Breakdown (max)	1200 V
Current - Collector (Ic) (max)	4930 A
Power - max	19000 W
Vce(on) (max) for different Vge, Ic	2.05V @ 15V, 3.6kA
Current - Collector Cutoff (max)	5 mA
Input	Standard
NTC Thermistor	None
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package/Case	Module
Supplier Device Package	AG-IHMB190-2

IRF9530NPBF

Power MOSFET, P-Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole
IRF7509TRPBF

Dual MOSFET, Complementary N and P Channel, 30 V, 2.7 A, 0.11 ohm, μSOIC, Surface Mount
SPW20N60C3FKSA1

Power MOSFET, N-Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole
IRF1404PBF

Power MOSFET, N-Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole
IRFP4229PBF

Power MOSFET, HEXFET, N-Channel, 300 V, 44 A, 0.038 ohm, TO-247AC, Through Hole
IRFP260NPBF

Power MOSFET, N-Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole
IRF7313TRPBF

Dual MOSFET, N-Channel, 30 V, 6.5 A, 0.023 ohm, SOIC, Surface Mount
BSS131H6327XTSA1

Power MOSFET, N-Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount