LOGO
LOGO
BSM35GP120GBOSA1 Image

img for reference only

Mfr. #:
BSM35GP120GBOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module Full Bridge 1200 V 45 A 230 W Base Mount Module
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tray
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (max) 1200 V
Current - Collector (Ic) (max) 45 A
Power - max 230 W
Vce(on) (max) 2.85V @ 15V, 35A
Current - Collector Cutoff (max) 500 μA
Vce Input Capacitance (Cies) 1.5 nF @ 25 V
Input Three-phase Bridge Rectifier
NTC Thermistor Yes
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Related models
  • IDW20G120C5BFKSA1

    Diode: Schottky rectifier; SiC; THT; 1.2kV; 2x10A; 250W; PG-TO247-3; tube; Ufmax: 1.4V

  • IDW20G65C5XKSA1

    Diode: Schottky rectifier; SiC; THT; 650V; 20A; 112W; PG-TO247-3; tube; Ufmax: 1.8V

  • IDW20G65C5BXKSA2

    Diode: Schottky rectifier; SiC; THT; 650V; 2x10A; 130W; PG-TO247-3; Tube; Ufmax: 1.8V

  • IDW24G65C5BXKSA2

    Diode: Schottky rectifier; SiC; THT; 650V; 2x12A; 152W; PG-TO247-3; Tube; Ufmax: 1.8V

  • IDW30G65C5XKSA1

    Diode: Schottky rectifier; SiC; THT; 650V; 30A; 150W; PG-TO247-3; tube; Ufmax: 1.8V

  • IDW32G65C5BXKSA2

    Diode: Schottky rectifier; SiC; THT; 650V; 2x16A; 188W; PG-TO247-3; Tube; Ufmax: 1.8V

  • IDW40G65C5XKSA1

    Diode: Schottky rectifier; SiC; THT; 650V; 40A; 112W; PG-TO247-3; tube; Ufmax: 1.8V

  • IDW40G65C5BXKSA2

    Diode: Schottky rectifier; SiC; THT; 650V; 2x20A; 112W; PG-TO247-3; Tube; Ufmax: 1.8V

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd