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IPA50R800CEXKSA2 Image

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Mfr. #:
IPA50R800CEXKSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 500 V 4.1A (Tc) 26.4W (Tc) PG-TO220-3-FP
Datasheet:
In Stock:
317
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CE
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 4.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 13V
On-Resistance (max) at Id, Vgs 800 mOhm @ 1.5A, 13V
Vgs(th) (max) at Id 3.5V @ 130μA
Gate Charge?(Qg) (max) at Vgs 12.4 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 280 pF @ 100 V
FET function -
Power dissipation (max) 26.4W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3-FP
Package/case TO-220-3 complete package
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