IPS60R1K0PFD7SAKMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPS60R1K0PFD7SAKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 650 V 4.7A (Tc) 26W (Tc) PG-TO251-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?PFD7
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	4.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	1 ohm @ 1A, 10V
Vgs(th) (max) at Id	4.5V @ 50μA
Gate Charge?(Qg) (max) at Vgs	6 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (max)	230 pF @ 400 V
FET Function	-
Power Dissipation (max)	26W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

IPD80P03P4L07ATMA2

Infineon P-channel MOS tube, Vds=30 V, 80 A, PG-TO252-3-11, SMD installation, IPD80P03P4L07ATMA2
IPA80R1K0CEXKSA2

Infineon MOS tube, Vds=800 V, 5.7 A, PG-TO 220 FullPAK, SMD installation, IPA80R1K0CEXKSA2
BSZ037N06LS5ATMA1

Infineon N-channel MOS tube, Vds=60 V, 104 A, TSDSON, SMD installation
BSC014N06NSATMA1

Infineon N-channel MOS tube, Vds=60 V, 100 A, PG-TDSON-8-17, SMD installation
IRF7820TRPBF

Infineon N-channel MOS tube, Vds=200 V, 3.7 A, SO-8, through-hole mounting, IRF7820TRPBF
BSZ42DN25NS3GATMA1

Infineon N-channel MOS tube, Vds=250 V, 5 A, PG-TSDSON-8-2, SMD installation
BSC070N10NS5SCATMA1

Infineon N-channel MOS tube, Vds=100 V, 82 A, PG-WSON, SMD installation
IPB029N06NF2SATMA1

Infineon N-channel enhancement mode MOS tube, Vds=60 V, 120 A, PG-TO263-3, SMD mount, 3 pins, IPB029N06NF2SATMA1