FF200R12KE3B2HOSA1 Infineon | Infineon agency

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Mfr. #：

FF200R12KE3B2HOSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT Module Half Bridge 1200 V 295 A 1050 W Base Mount Module

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Package	Tray
IGBT Type	-
Configuration	Half-bridge
Voltage - Collector-Emitter Breakdown (max)	1200 V
Current - Collector (Ic) (max)	295 A
Power - max	1050 W
Vce(on) (max)	2.15V @ 15V, 200A
Current - Collector Cutoff (max)	5 mA
Vce(on) (max)	14 nF @ 25 V
Input	Standard
NTC Thermistor	None
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package/Case	Module
Supplier Device Package	Module

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